Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

被引：115

作者：

Chang, Seo Hyoung ^{[1
]}

Lee, Shin Buhm ^{[1
]}

Jeon, Dae Young ^{[2
]}

Park, So Jung ^{[2
]}

Kim, Gyu Tae ^{[2
]}

Yang, Sang Mo ^{[1
]}

Chae, Seung Chul ^{[1
]}

Yoo, Hyang Keun ^{[1
]}

Kang, Bo Soo ^{[3
]}

Lee, Myoung-Jae ^{[4
]}

Noh, Tae Won ^{[1
]}

机构：

[1] Seoul Natl Univ, ReCFI, Dept Phys & Astron, Seoul 151747, South Korea

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[3] Hanyang Univ, Dept Appl Phys, Ansan 426791, Gyeonggi Do, South Korea

[4] Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, Gyeonggi Do, South Korea

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 35期

基金：

新加坡国家研究基金会;

关键词：

NONVOLATILE; SWITCHES; DIODE;

D O I：

10.1002/adma.201102395

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A TiO2/VO2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.

引用

页码：4063 / +

页数：6

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