Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation

被引：7
作者：
Wei, JiaNan [1 ]
Li, Yang [1 ]
Yang, WeiTao [1 ]
He, ChaoHui [1 ]
Li, YongHong [1 ]
Zang, Hang [1 ]
Li, Pei [1 ]
Zhang, JinXin [2 ]
Guo, Gang [3 ]
机构：
[1] Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China
[2] Xidian Univ, Sch Aerosp Sci & Technol, Xian 710126, Peoples R China
[3] China Inst Atom Energy, Natl Innovat Ctr Radiat Applicat, Beijing 102413, Peoples R China
来源：
SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2020年 / 63卷 / 05期
基金：
中国国家自然科学基金;
关键词：
silicon-germanium HBT; proton irradiation; single event transient; charge collection model; HEAVY-ION; LOGIC;
D O I：
10.1007/s11431-019-1474-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The study presents an investigation into the proton-induced current transient in a silicon-germanium heterojunction bipolar transistor (SiGe HBT). The temporal information of the proton-induced current transients is first measured and then compared with results from heavy ion microbeam experiment. Additionally, a model for proton-induced charge collection based on Geant4 Monte Carlo simulation tools is constructed by using the information from heavy ion experiment and 3D TCAD simulation. The results obtained by the validated model exhibit good consistency with the proton experiment.
引用
收藏
页码：851 / 858
页数：8
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