A study of hydrogen doped semiconductors using the INDO method

被引：33

作者：

Stashans, A ^{[1
]}

Kitamura, M ^{[1
]}

机构：

[1] UNIV LATVIA,INST SOLID STATE PHYS,LV-1063 RIGA,LATVIA

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 99卷 / 08期

关键词：

impurities in semiconductors; point defects;

D O I：

10.1016/0038-1098(96)00165-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Stability of monoatomic hydrogen in Si and GaAs crystals is studied by using quantum chemical Intermediate Neglect of Differential Overlap (INDO) method. Some interstitial positions are considered for a H-impurity and their energetical preferences are studied for an intrinsic, n-type and p-type semiconductors. The charge transfer and the positions of defect levels due to the inserted hydrogen are discussed. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：583 / 588

页数：6

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