Growth Conditions of Graphene Grown in Chemical Vapour Deposition (CVD)

被引：8

作者：

Sirat, Mohamad Shukri ^{[1
]}

Ismail, Edhuan ^{[1
]}

Purwanto, Hadi ^{[1
]}

Abid, Mohd Asyadi Azam Mohd ^{[2
]}

Ani, Mohd Hanafi ^{[1
]}

机构：

[1] IIUM, Dept Mfg & Mat Engn, Jalan Gombak, Kuala Lumpur 53100, Federal Territo, Malaysia

[2] Univ Tekn Malaysia Melaka, Fac Mfg Engn, Durian Tunggal 76100, Melaka Bandaray, Malaysia

来源：

SAINS MALAYSIANA | 2017年 / 46卷 / 07期

关键词：

Chemical vapour deposition (CVD); graphene; optimization; SINGLE-LAYER GRAPHENE; MONOLAYER GRAPHENE; RAMAN-SPECTROSCOPY; HIGH-QUALITY; SUBSTRATE; MORPHOLOGY; PRESSURE; CU(111); FILMS;

D O I：

10.17576/jsm-2017-4607-04

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed such as electron mobility, transparency and conductivity as compared to the pristine graphene. Here, we did a study on the effects of reaction conditions such as methane, CH4 concentration and deposition time towards the quality of graphene produced. We found that by lowering both CH4 concentration down to 20% and deposition time to 5 min, a better quality graphene was produced with higher I-2D/I-G ratio of 0.82 compared to other reaction condition. Through the analysis, we concluded that there are two important parameters to be controlled to obtain high quality graphene.

引用

页码：1033 / 1038

页数：6

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