Electrical properties of C60 delta-doped GaAs and AlGaAs layers grown by MBE

被引：5

作者：

Nishinaga, Jiro ^{[1
]}

Hayashi, Takashi ^{[1
]}

Hishida, Kiyoshi ^{[1
]}

Horikoshi, Yoshiji ^{[1
]}

机构：

[1] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10 | 2010年 / 7卷 / 10期

关键词：

GaAs; AlGaAs; MBE; doping; electrical properties; SIMS; trap levels; EPITAXY; FILMS;

D O I：

10.1002/pssc.200983852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

C-60 delta-doped GaAs and AlGaAs layers are grown by migration enhanced epitaxy method. Sticking coefficients of C-60 on GaAs and AlGaAs surfaces and electrical characteristics of the layers are investigated by secondary ion mass spectroscopy (SIMS) and electrochemical capacitance voltage (ECV) measurements. SIMS profiles indicate that the layers have well-defined delta-doped structures, and the sticking coefficients of C-60 on GaAs and AlGaAs surfaces are confirmed to be sufficiently high. ECV profiles of C-60 delta-doped GaAs and AlGaAs layers suggest that C-60 molecules in GaAs and AlGaAs lattices produce electron traps which can be charged or discharged by applied electric fields. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2486 / 2489

页数：4

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