Will Quantum Dots Replace Quantum Wells As the Active Medium of Choice in Future Semiconductor Lasers?

被引：11

作者：

Chow, Weng W. ^{[1
]}

Lorke, Michael ^{[2
]}

Jahnke, Frank ^{[2
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Univ Bremen, Inst Theoret Phys, D-28334 Bremen, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2011年 / 17卷 / 05期

关键词：

Semiconductor quantum-dot laser theory; GAIN; THRESHOLD;

D O I：

10.1109/JSTQE.2011.2157085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lasing capabilities and limitations of quantum dots are assessed using a first-principles theory with a rigorous treatment of relevant physics and without the free parameters plaguing predictive capabilities in usual gain calculations. Our results reveal quantitatively the extent the reduced threshold advantage is confronted with a larger sensitivity to saturation effects. Added to this intrinsic constraint is the present experimental performance limitation arising from inhomogeneous broadening due to growth fluctuations.

引用

页码：1349 / 1355

页数：7

共 38 条

[1]

Allen L., 1987, Optical Resonance and TwoLevel Atoms

[2] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].