Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 μm

被引：35
|
作者：
Caroff, P [1 ]
Bertru, N [1 ]
Le Corre, A [1 ]
Dehaese, O [1 ]
Rohel, T [1 ]
Alghoraibi, I [1 ]
Folliot, H [1 ]
Loualiche, S [1 ]
机构：
[1] INSA, UMR C6082, Lab Etude Nanostruct Semicond, F-35043 Rennes, France
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 33-36期
关键词：
InP; InAs; quantum dots; (311)B surface; molecular-beam epitaxy; nanostructures;
D O I：
10.1143/JJAP.44.L1069
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The As flux effect on InAs quantum dots formed by gas source molecular beam epitaxy on lnP substrates, oriented following the (311)B crystallographic direction has been studied. Atomic force microscopy images show that the quantum dot (QD) density dramatically increases and quantum dot sizes decrease, when decreasing the As pressure. Moreover, the size dispersion is narrowed. Photoluminescence measurements on the high QD density samples is shifted to higher energy, toward the telecommunication important 1.55 mu m emission.
引用
收藏
页码：L1069 / L1071
页数：3
相关论文
共 50 条
  • [41] Intermixing of Highly-Stacked InAs/InGaAlAs Quantum Dots Grown on InP (311)B Substrate by SiO2 Sputtering and Annealing Technique
    Matsushita, A.
    Matsumoto, A.
    Akahane, K.
    Matsushima, Y.
    Utaka, K.
    2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013,
  • [42] Pathway to achieving circular InAs quantum dots directly on (100) InP and to tuning their emission wavelengths toward 1.55 μm
    Leavitt, Richard P.
    Richardson, Christopher J. K.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (05):
  • [43] InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(001) substrate
    Hasan, Samiul
    Han, Han
    Korytov, Maxim
    Pantouvaki, Marianna
    Van Campenhout, Joris
    Merckling, Clement
    Vandervorst, Wilfried
    JOURNAL OF CRYSTAL GROWTH, 2020, 531
  • [44] Threshold Current Density and Emitting Wavelength Evolution with Stack Number in InAs Quantum Dash Lasers at 1.55 μm
    Zhou, Dayong
    Piron, Rozenn
    Grillot, Frederic
    Dehaese, Olivier
    Homeyer, Estelle
    Batte, Thomas
    Tavernier, Karine
    Mace, Erwan
    Even, Jacky
    Le Corre, Alain
    Loualiche, Slimane
    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 484 - 486
  • [45] Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 μm
    Gong, Z
    Fang, ZD
    Miao, ZH
    Niu, ZC
    Feng, SL
    JOURNAL OF CRYSTAL GROWTH, 2005, 274 (1-2) : 78 - 84
  • [46] Wavelength Blue-Shifting and Gain Spectral Bandwidth of InAs/InP Quantum Dots for Laser Applications Around 1.55 μm
    Xiong, Yiling
    Zhang, Xiupu
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2018, 54 (01)
  • [47] 1.55-μm range InAs/InP (100) quantum dot telecom devices
    Notzel, R.
    Anantathanasarn, S.
    van Veldhoven, P. J.
    Barbarin, Y.
    Bente, E. A. J. M.
    Smit, M. K.
    Cade, N. I.
    Kamada, H.
    Satpati, B.
    Trampert, A.
    NANOPHOTONICS FOR COMMUNICATION: MATERIALS, DEVICES, AND SYSTEMS IV, 2007, 6779
  • [48] Effects of substrate doping and surface roughness on self-assembling InAs/InP quantum dots
    Borgström, M
    Johansson, J
    Landin, L
    Seifert, W
    APPLIED SURFACE SCIENCE, 2000, 165 (2-3) : 241 - 247
  • [49] Polarization Dependence of Photoluminescence from InAs Quantum Dots Grown on InP(311)B Substrates Using Digital Embedding Method
    Akahane, Kouichi
    Yamamoto, Hiroyuki
    Matsumoto, Atsushi
    Umezawa, Toshimasa
    Sotobayashi, Hideyuki
    Yamamoto, Naokatsu
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (08):
  • [50] High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 μm Tunnel Injection Laser
    Bhowmick, Sishir
    Baten, Md Zunaid
    Frost, Thomas
    Ooi, Boon S.
    Bhattacharya, Pallab
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2014, 50 (01) : 7 - 14
12345