Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 μm

被引：35

作者：

Caroff, P ^{[1
]}

Bertru, N ^{[1
]}

Le Corre, A ^{[1
]}

Dehaese, O ^{[1
]}

Rohel, T ^{[1
]}

Alghoraibi, I ^{[1
]}

Folliot, H ^{[1
]}

Loualiche, S ^{[1
]}

机构：

[1] INSA, UMR C6082, Lab Etude Nanostruct Semicond, F-35043 Rennes, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 33-36期

关键词：

InP; InAs; quantum dots; (311)B surface; molecular-beam epitaxy; nanostructures;

D O I：

10.1143/JJAP.44.L1069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The As flux effect on InAs quantum dots formed by gas source molecular beam epitaxy on lnP substrates, oriented following the (311)B crystallographic direction has been studied. Atomic force microscopy images show that the quantum dot (QD) density dramatically increases and quantum dot sizes decrease, when decreasing the As pressure. Moreover, the size dispersion is narrowed. Photoluminescence measurements on the high QD density samples is shifted to higher energy, toward the telecommunication important 1.55 mu m emission.

引用

页码：L1069 / L1071

页数：3

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