Defect reduction in (1 1 (2)over-bar 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers

被引：6

作者：

Xu, S. R. ^{[1
]}

Zhang, J. C. ^{[1
]}

Yang, L. A. ^{[1
]}

Zhou, X. W. ^{[1
]}

Cao, Y. R. ^{[2
]}

Zhang, J. F. ^{[1
]}

Xue, J. S. ^{[1
]}

Liu, Z. Y. ^{[1
]}

Ma, J. C. ^{[1
]}

Bao, F. ^{[3
]}

Hao, Y. ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Elect & Mech Engn, Xian 710071, Peoples R China

[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 327卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Crystal morphology; Metal organic chemical vapor deposition; Nitrides; Semiconducting III-V materials; VAPOR-PHASE EPITAXY; LIGHT-EMITTING-DIODES; OVERGROWTH;

D O I：

10.1016/j.jcrysgro.2011.06.013

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the use of TiN interlayer to reduce the threading dislocation density in nonpolar a-plane GaN material grown by metal organic chemical vapor deposition (MOCVD), where the interlayer was formed by depositing the Ti metal on a GaN template followed by nitridize. By means of high resolution X-ray diffraction, transmission electron microscopy, and atomic force microscopy analyses, we found that the nonpolar a-plane GaN epitaxial grown on 10 nm-thick TIN interlayer, both on-axis and off-axis, exhibits a significant reduction in the full width at half maximum, the basal plane stacking faults (BSF), the threading dislocation density, and the root-mean-square roughness, respectively. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：94 / 97

页数：4

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