Defect reduction in (1 1 (2)over-bar 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers

被引：6
作者：
Xu, S. R. [1 ]
Zhang, J. C. [1 ]
Yang, L. A. [1 ]
Zhou, X. W. [1 ]
Cao, Y. R. [2 ]
Zhang, J. F. [1 ]
Xue, J. S. [1 ]
Liu, Z. Y. [1 ]
Ma, J. C. [1 ]
Bao, F. [3 ]
Hao, Y. [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Elect & Mech Engn, Xian 710071, Peoples R China
[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 327卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Crystal morphology; Metal organic chemical vapor deposition; Nitrides; Semiconducting III-V materials; VAPOR-PHASE EPITAXY; LIGHT-EMITTING-DIODES; OVERGROWTH;
D O I：
10.1016/j.jcrysgro.2011.06.013
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on the use of TiN interlayer to reduce the threading dislocation density in nonpolar a-plane GaN material grown by metal organic chemical vapor deposition (MOCVD), where the interlayer was formed by depositing the Ti metal on a GaN template followed by nitridize. By means of high resolution X-ray diffraction, transmission electron microscopy, and atomic force microscopy analyses, we found that the nonpolar a-plane GaN epitaxial grown on 10 nm-thick TIN interlayer, both on-axis and off-axis, exhibits a significant reduction in the full width at half maximum, the basal plane stacking faults (BSF), the threading dislocation density, and the root-mean-square roughness, respectively. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：94 / 97
页数：4
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