Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric

被引:26
作者
Lu, Xing [1 ,2 ]
Ma, Jun [2 ]
Jiang, Huaxing [2 ]
Liu, Chao [2 ]
Xu, Peiqiang [2 ]
Lau, Kei May [2 ]
机构
[1] Xi An Jiao Tong Univ, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
关键词
AlN/GaN; benzocyclobutene (BCB) planarization; gate-last self-aligned; high-temperature; in situ SiNx; MISHEMT; RF; source/drain (S/D) regrowth; ALGAN/GAN HEMTS; PERFORMANCE; F(T);
D O I
10.1109/TED.2015.2421031
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on the fabrication and characterization of gate-last self-aligned in situ SiNx/AlN/GaN MISHEMTs. The devices featured in situ grown SiNx by metal-organic chemical vapor deposition as a gate dielectric and for surface passivation. Selective source/drain regrowth was incorporated to reduce contact resistance. SiNx sidewall spacers and low-kappa benzocyclobutene polymer (kappa = 2.65) supporting layers were employed under the gate head to minimize the parasitic capacitance for high-frequency operation. The device with a gate length (L-G) of 0.23 mu m exhibited a maximum drain current density (I-DS) exceeding 1600 mA/mm with a high ON/OFF ratio (I-ON/I-OFF) of over 10(7). The current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) were 55 and 86 GHz, respectively. In addition, the effect of temperature, from room temperature up to 550 K, on the dc and RF performances of the gate-last self-aligned MISHEMTs was studied.
引用
收藏
页码:1862 / 1869
页数:8
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