Effect of Rapid Thermal Annealing on Structural and Electrical Characteristics of Ni-Al-O Gate Dielectrics

被引：0
作者：
Li Man [1 ]
Liu Bao-Ting [1 ]
Wang Yu-Qiang [2 ]
Wang Kuan-Mao [1 ]
机构：
[1] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
[2] Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China
来源：
JOURNAL OF INORGANIC MATERIALS | 2011年 / 26卷 / 03期
关键词：
high-k gate dielectric; Ni-Al-O thin film; reactive pulsed laser deposition; FILMS;
D O I：
10.3724/SP.J.1077.2011.00257
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The high-k Ni-Al-O gate dielectric films were deposited on Si (100) and platinized Si (111) substrates by reactive pulsed-laser deposition (PLD) at 400 degrees C, and then annealed in a rapid thermal annealing furnace at various temperatures ranging from 600 degrees C to 750 degrees C. The structural and electrical properties of the Ni-Al-O films were investigated. It is found that Ni-Al-O thin film annealed up to 750 degrees C is amorphous and the root-mean-square roughness of the film is less than 0.5 nm. The dielectric constant of the film measured at the frequency of 1 MHz is determined to be 9.9 with Pt/Ni-Al-O/Pt structure. The capacitance and leakage current density of the film annealed above 700 degrees C are 135 pF and 7.0x10(-7) A/cm(2), respectively. The results indicate that the amorphous Ni-Al-O film is a promising candidate for high-k gate dielectric.
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页码：257 / 260
页数：4
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