Design and analysis of a 70-ps SiGe differential RF switch

被引：15

作者：

Hancock, TM ^{[1
]}

Rebeiz, GM ^{[1
]}

机构：

[1] Univ Michigan, Radiat Lab, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2005年 / 53卷 / 07期

关键词：

current mode logic (CML); emitter coupled logic (ECL); RF switches; rise time; silicon-germanium (SiGe); switching speed; ultra-wideband (UWB);

D O I：

10.1109/TMTT.2005.850427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and analysis of an SiGe high isolation single-pole double-throw (SPDT) differential absorptive switch at 24 GHz for pulsed ultra-wideband applications. Sub-100-ps envelope rise times are achieved through the use of differential current steering. The SPDT results in 1.9 dB of gain in the passband and an isolation of 35 dB while remaining matched at its ports (absorptive). The measured rise time of the RF envelope is 70 ps using a transistor with an f(T) of 80 GHz and agrees with both the simulated and analytically determined values.

引用

页码：2403 / 2410

页数：8

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