A Temperature-Stable and Low Impedance Piezoelectric MEMS Resonator for Drop-in Replacement of Quartz Crystals

被引:24
作者
Chen, Wen [1 ]
Jia, Wenhan [1 ]
Xiao, Yuhao [1 ]
Feng, Zhihong [2 ]
Wu, Guoqiang [1 ]
机构
[1] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Hubei, Peoples R China
[2] Huawei Technol Co Ltd, Shenzhen 518129, Peoples R China
基金
中国国家自然科学基金;
关键词
Temperature-stable; low impedance; microelectromechanical system (MEMS) resonator; piezoelectric; temperature compensated crystal oscillator (TCXO); passive temperature compensation; FREQUENCY REFERENCE; OSCILLATOR;
D O I
10.1109/LED.2021.3094319
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, we report a highly temperature-stable and low impedance scandium doped aluminum nitride (Sc(x)AI(1-x)N, x = 9.5%) on silicon piezoelectric microelectromechanical system (MEMS) resonator. Passive temperature compensation techniques, including heavy doping and composite structure using oxide layers, are employed to minimize the frequency drifts over temperature of the piezoelectric MEMS resonator. The turnover point is adjusted by changing the in-plane crystal orientation of the (100) doped device silicon wafer. A frequency variation of +/- 21.5 ppm over the industry temperature range from -40 degrees C to 85 degrees C is achieved when the crystal orientation of the device silicon wafer is arranged at around 22.5 degrees from the <110> direction. The measured loaded quality factor (Q(l)) is 10017 with a motional impedance of 28 degrees at its series resonant frequency of 24.44 MHz. The deduced unloaded quality factor (Q(un)) is above 45000. Thanks to the excellent temperature stability and low impedance, the reported piezoelectric MEMS resonator shows great potential to directly replace the classical quartz crystal resonators without any active temperature compensation.
引用
收藏
页码:1382 / 1385
页数:4
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