Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory

被引：1

作者：

Deleruyelle, D ^{[1
]}

Cluzel, J ^{[1
]}

De Salvo, B ^{[1
]}

Fraboulet, D ^{[1
]}

Mariolle, D ^{[1
]}

Buffet, N ^{[1
]}

Deleonibus, S ^{[1
]}

机构：

[1] CEA, LETI, F-38054 Grenoble 9, France

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 10期

关键词：

D O I：

10.1016/S0038-1101(03)00171-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we present a new memory device concept, named the multi-tunnel-junction (MTJ) memory, which uses a thin silicon nanocrystals layer embedded between two ultra-thin oxides as charge injector medium. We show that this device offers low programming voltages and fast writing/erasing characteristics. A simple characterization method, suitable for nanosecond range phenomena characterization and overcoming the limitation of the classical electrical characterization tools, has been also developed. This method allows us to characterize the dynamic behaviors of the MTJ devices. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1641 / 1644

页数：4

共 6 条

[1] Materials issues for layered tunnel barrier structures [J].