Effects of SiNx interlayer on characterisation of amorphous diamond-like carbon films

被引：3
作者：
Chen, Q. Y. [1 ,2 ]
Shih, K. M. [2 ]
Shen, Y. H. [1 ]
Luo, Y. [1 ]
Li, R. [1 ]
机构：
[1] Southwest Univ Sci & Technol, Key Subject Lab Natl Def Radioact Waste & Environ, Mianyang 621010, Peoples R China
[2] Univ Hong Kong, Dept Civil Engn, Hong Kong, Hong Kong, Peoples R China
来源：
MATERIALS SCIENCE AND TECHNOLOGY | 2015年 / 31卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Diamond like carbon films; Scanning electron microscopy; Raman spectra; SiNx interlayer; Magnetron sputtering; RAMAN-SPECTROSCOPY; MECHANICAL-PROPERTIES; RESIDUAL-STRESS; MICRO-RAMAN; COATINGS; SPECTRA; GROWTH; NITROGEN;
D O I：
10.1179/1743284714Y.0000000646
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetron sputtering amorphous diamond-like carbon film is successfully deposited by SiNx interlayer approach. The scanning electron microscopy study reveals the creation of high uniform surface micrograph diamond-like carbon films with SiNx interlayer. For comparison, diamond-like carbon films with different interlayers are also grown. The Raman spectra are analyzed in order to characterize the stressed induce peak shifts of the films. The interactions of C atom with Si(100) and SiNx surface are studied by density functional theory simulation. The effects of interlayers on the films deposition and the considering deposition mechanism are discussed. It is suggested that the diamond-like carbon and SiNx bilayer structure can help to render applications in protective coatings and high quality silicon on diamond related radiation tolerance devices.
引用
收藏
页码：703 / 708
页数：6
相关论文
共 45 条
  • [1] EFFECT OF INTRINSIC GROWTH STRESS ON THE RAMAN-SPECTRA OF VACUUM-ARC-DEPOSITED AMORPHOUS-CARBON FILMS
    AGER, JW
    ANDERS, S
    ANDERS, A
    BROWN, IG
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (25) : 3444 - 3446
  • [2] QUANTITATIVE MEASUREMENT OF RESIDUAL BIAXIAL STRESS BY RAMAN-SPECTROSCOPY IN DIAMOND GROWN ON A TI ALLOY BY CHEMICAL-VAPOR-DEPOSITION
    AGER, JW
    DRORY, MD
    [J]. PHYSICAL REVIEW B, 1993, 48 (04): : 2601 - 2607
  • [3] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES
    ANGUS, JC
    HAYMAN, CC
    [J]. SCIENCE, 1988, 241 (4868) : 913 - 921
  • [4] Plasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon wafers
    Bayram, Baris
    Akar, Orhan
    Akin, Tayfun
    [J]. DIAMOND AND RELATED MATERIALS, 2010, 19 (11) : 1431 - 1435
  • [5] Bonding and mechanical properties of ultrathin diamond-like carbon films
    Beghi, MG
    Ferrari, AC
    Teo, KBK
    Robertson, J
    Bottani, CE
    Libassi, A
    Tanner, BK
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (20) : 3804 - 3806
  • [6] BRAZA JF, 1992, MATER SCI TECH SER, V8, P574, DOI 10.1179/026708392790171099
  • [7] BULL SJ, 1992, MATER SCI TECH SER, V8, P679, DOI 10.1179/026708392790171143
  • [8] Diamond-like carbon for data and beer storage
    Casiraghi, Cinzia
    Robertson, John
    Ferrari, Andrea C.
    [J]. MATERIALS TODAY, 2007, 10 (1-2) : 44 - 53
  • [9] Synthesis and field emission of diamond-like carbon nanorods on TiO2/Ti nanotube arrays
    Chen, Jian-Biao
    Wang, Cheng-Wei
    Wang, Jian
    Li, Yan
    Guo, Rui-Sheng
    Ma, Bao-Hong
    Zhou, Feng
    Liu, Wei-Min
    [J]. APPLIED SURFACE SCIENCE, 2009, 256 (01) : 39 - 42
  • [10] MICRO-RAMAN FOR DIAMOND FILM STRESS-ANALYSIS
    CHEN, KH
    LAI, YL
    LIN, JC
    SONG, KJ
    CHEN, LC
    HUANG, CY
    [J]. DIAMOND AND RELATED MATERIALS, 1995, 4 (04) : 460 - 463
12345