Low-temperature deposition of films from tetrakis(dimethylamido)titanium and ammonia

被引：8
|
作者：
Berry, A [1 ]
Mowery, R [1 ]
Turner, NH [1 ]
Seitzman, L [1 ]
Dunn, D [1 ]
Ladouceur, H [1 ]
机构：
[1] USN, Res Lab, Div Chem, Washington, DC 20375 USA
来源：
THIN SOLID FILMS | 1998年 / 323卷 / 1-2期
关键词：
tetrakis(dimethylamido)titanium (TDMAT); chemical vapor deposition; nanocrystallite;
D O I：
10.1016/S0040-6090(97)00963-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the chemical vapor deposition (CVD) and characterization of thin films grown from the reaction of tetrakis(dimethylamido)titanium (Ti(NMe2)(4), TDMAT) with NH3 at 423 K. These films, deposited on a variety of substrates, are amorphous except for a small number of embedded nanocrystallites. The films exhibit peeling at thicknesses greater than ca. 200 nm on all substrates and show no visible evidence of etching after exposure to concentrated hydrochloric or nitric acid for 5 min. X-ray photoelectron spectroscopy (XPS) results yield a N/Ti ratio of 0.89 after normalizing the data to that of a TiN standard. The O/Ti ratio varies from 0.26 to 0.66, and the C content is less than 1 at.%. Transmission Fourier transform infrared (FTIR) spectroscopy of films deposited on Si gives spectra consistent with the presence of N-H bonds. (C) 1998 Elsevier Science S.A. All rights reserved.
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页码：10 / 17
页数：8
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