Quantification of void defects on PERC solar cell rear contacts

被引：4

作者：

Grosser, Stephan ^{[1
]}

Swatek, Sina ^{[1
]}

Pantzer, Jonas ^{[1
]}

Turek, Marko ^{[1
]}

Hagendorf, Christian ^{[1
]}

机构：

[1] Fraunhofer Ctr Silicon Photovolta CSP, Otto Eissfeld Str 12, D-06120 Halle, Saale, Germany

来源：

PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2016) | 2016年 / 92卷

关键词：

PERC solar cell; void; defect quantification;

D O I：

10.1016/j.egypro.2016.07.007

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Passivated emitter and rear (PERC) solar cells can show void formation within their metallized local rear contact. It is known that voids can cause enhanced rear side recombination. In this work, we present a study on void related current losses and the correlation to the local Al-doped silicon layer which forms the back-surface field (BSF) at the rear contact. At first, void related current losses have been quantitatively evaluated. By further microstructural investigation at lengthwise prepared rear contacts, a method for the analysis of BSF thickness distribution was developed. It turned out that BSFs within voids can vanish on both, small and large length scales. Regions with voids can be well passivated and result therefore in negligible current losses. The presented approach allows the quantitatively assessment of PERC solar cell rear contacts in terms of total current losses and void ratio. (C) 2016 The Authors. Published by Elsevier Ltd.

引用

页码：37 / 41

页数：5