Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition

被引：29
作者：
An, Cheol Hyun [1 ,2 ]
Lee, Woongkyu [1 ,2 ,3 ]
Kim, Sang Hyeon [1 ,2 ]
Cho, Cheol Jin [1 ,2 ,4 ]
Kim, Dong-Gun [1 ,2 ]
Kwon, Dae Seon [1 ,2 ]
Cho, Seong Tak [1 ,2 ]
Cha, Soon Hyung [1 ,2 ]
Lim, Jun Il [1 ,2 ]
Jeon, Woojin [5 ]
Hwang, Cheol Seong [1 ,2 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea
[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[4] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 20792, South Korea
[5] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 17104, South Korea
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2019年 / 13卷 / 03期
关键词：
atomic layer deposition; DRAM capacitors; electrodes; Ru; ZrO2/Al2O3/ZrO2; CHEMICAL-VAPOR-DEPOSITION; EQUIVALENT OXIDE THICKNESS; THIN-FILMS; BEHAVIOR; NM;
D O I：
10.1002/pssr.201800454
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical characteristics of metal-insulator-metal (MIM) capacitors consisting of a ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film, a TiN bottom electrode (BE), and two different top electrodes (TEs; TiN and Ru) are examined. The enhanced property in the leakage current density versus equivalent oxide thickness (J-t(ox)) plot is observed in the MIM structure with the Ru TE for the ZAZ film with specific film thickness of approximate to 4.6 nm. Especially, the J due to the electron injection from the TiN BE was significantly decreased for the Ru TE case compared to the TiN TE sample at 1-2 MV cm(-1) electric field region. These extraordinary behaviors are found to have originated the change in the oxygen vacancy density in the ZAZ film, which induces Poole-Frenkel emission through the reaction with the active oxygen during the Ru TE fabrication process. The difference in nonlinearity of the capacitance-voltage (C-V) curve also indicates a different trap density at the interface of ZAZ and the TiN BE, suggesting a change in the oxygen vacancy density in the ZAZ film.
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页数：8
相关论文
共 30 条
[1]  
An C. S., UNPUB
[2]   Quantitative Analysis of the Incorporation Behaviors of Sr and Ti Atoms During the Atomic Layer Deposition of SrTiO3 Thin Films [J].
Chung, Min Jung ;
Jeon, Woojin ;
An, Cheol Hyun ;
Kim, Sang Hyeon ;
Lee, Yoon Kyeung ;
Lee, Woongkyu ;
Hwang, Cheol Seong .
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (10) :8836-8844
[3]   Resistance switching in HfO2 metal-insulator-metal devices [J].
Gonon, P. ;
Mougenot, M. ;
Vallee, C. ;
Jorel, C. ;
Jousseaume, V. ;
Grampeix, H. ;
El Kamel, F. .
JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
[4]   Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time [J].
Han, Jeong Hwan ;
Lee, Sang Woon ;
Kim, Seong Keun ;
Han, Sora ;
Lee, Woongkyu ;
Hwang, Cheol Seong .
CHEMISTRY OF MATERIALS, 2012, 24 (08) :1407-1414
[5]   Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode [J].
Han, Jeong Hwan ;
Han, Sora ;
Lee, Woongkyu ;
Lee, Sang Woon ;
Kim, Seong Keun ;
Gatineau, Julien ;
Dussarrat, Christian ;
Hwang, Cheol Seong .
APPLIED PHYSICS LETTERS, 2011, 99 (02)
[6]   Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas [J].
Han, Jeong Hwan ;
Lee, Sang Woon ;
Kim, Seong Keun ;
Han, Sora ;
Hwang, Cheol Seong ;
Dussarrat, Christian ;
Gatineau, Julien .
CHEMISTRY OF MATERIALS, 2010, 22 (20) :5700-5706
[7]   Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor [J].
Han, Jeong Hwan ;
Lee, Sang Woon ;
Choi, Gyu-Jin ;
Lee, Sang Young ;
Hwang, Cheol Seong ;
Dussarrat, Christian ;
Gatineau, Julien .
CHEMISTRY OF MATERIALS, 2009, 21 (02) :207-209
[8]   Demonstrating the Ultrathin Metal-Insulator-Metal Diode Using TiN/ZrO2-Al2O3-ZrO2 Stack by Employing RuO2 Top Electrode [J].
Jeon, Woojin ;
Kim, Youngjin ;
An, Cheol Hyun ;
Hwang, Cheol Seong ;
Gonon, Patrice ;
Vallee, Christophe .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (02) :660-666
[9]   Asymmetry in electrical properties of Al-doped TiO2 film with respect to bias voltage [J].
Jeon, Woojin ;
Rha, Sang Ho ;
Lee, Woongkyu ;
An, Cheol Hyun ;
Chung, Min Jung ;
Kim, Sang Hyun ;
Cho, Cheol Jin ;
Kim, Seong Keun ;
Hwang, Cheol Seong .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2015, 9 (07) :410-413
[10]   Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film [J].
Jeon, Woojin ;
Yoo, Sijung ;
Kim, Hyo Kyeom ;
Lee, Woongkyu ;
An, Cheol Hyun ;
Chung, Min Jung ;
Cho, Cheol Jin ;
Kim, Seong Keun ;
Hwang, Cheol Seong .
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (23) :21632-21637
123