Photoluminescence properties of Eu-doped GaN by ion implantation

被引：0

作者：

Nakanishi, Y ^{[1
]}

Wakahara, A ^{[1
]}

Yoshida, A ^{[1
]}

Ohshima, T ^{[1
]}

Itoh, H ^{[1
]}

Sakai, S ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷

关键词：

GaN; Eu; ion implantation; photoluminescence properties;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Europium (Eu) was implanted into GaN epitaxial layer. The Eu-implanted GaN films were annealed in 0.1 atm NH3 diluted with N-2 at the temperature range of 950-1100 degreesC to remove the implantation damage. Photoluminescence properties were measured in the temperature range of 80-280K by using He-Cd laser as an excitation source. Strong emission at 621 nm, corresponding to the transition from D-5(0) to F-7(2) states of Eu3+ was observed and the thermal quenching of the PL intensity was very small.

引用

页码：486 / 489

页数：4

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