Flip-Chip Integration of InP to SiN Photonic Integrated Circuits

被引:55
作者
Theurer, Michael [1 ]
Moehrle, Martin [1 ]
Sigmund, Ariane [1 ]
Velthaus, Karl-Otto [1 ]
Oldenbeuving, Ruud M. [2 ]
Wevers, Lennart [2 ]
Postma, Ferry M. [2 ]
Mateman, Richard [2 ]
Schreuder, Frederik [2 ]
Geskus, Dimitri [2 ]
Worhoff, Kerstin [2 ]
Dekker, Ronald [2 ]
Heideman, Rene G. [2 ]
Schell, Martin [1 ]
机构
[1] Fraunhofer Heinrich Hertz Inst, Einsteinufer 37, D-10587 Berlin, Germany
[2] LioniX Int, NL-7500 AL Enschede, Netherlands
关键词
Flip-chip devices; hybrid integrated circuits; reflectometry; semiconductor lasers; silicon photonics; SILICON; POWER;
D O I
10.1109/JLT.2020.2972065
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present our hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application to complex photonic integrated circuits. The integration interface comprises vertical alignment stops, which simplify the alignment process and allow for array integration with the same simplicity as for single dies. Horizontal alignment is carried out by utilizing optical backscatter reflectometry to get an active feedback signal without the need to operate the chip. Thus, typical contacting limitations of active flip-chip alignment are overcome. By using this method, we demonstrate the integration of InP DFB lasers with more than 60 mW of optical power coupled to a SiN waveguide with an averaged coupling loss of -2.1 dB. The hybrid integration process is demonstrated for single dies as well as full arrays. We evaluate the feasibility of the assembly process for complex photonic integrated circuits by integrating an InP gain chip to a SiN TriPleX external cavity. The process proves to be well suited and allows monitoring chip quality during assembly. A fully functional hybrid integrated tunable laser is fabricated, which is capable of full C-band tuning with optical output power of up to 60 mW.
引用
收藏
页码:2630 / 2636
页数:7
相关论文
共 20 条
[1]   WDM Source Based on High-Power, Efficient 1280-nm DFB Lasers for Terabit Interconnect Technologies [J].
Buckley, Bob B. ;
Fryslie, Stewart T. M. ;
Guinn, Keith ;
Morrison, Gordon ;
Gazman, Alexander ;
Shen, Yiwen ;
Bergman, Keren ;
Mashanovitch, Milan L. ;
Johansson, Leif A. .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2018, 30 (22) :1929-1932
[2]   Photonic Packaging: Transforming Silicon Photonic Integrated Circuits into Photonic Devices [J].
Carroll, Lee ;
Lee, Jun-Su ;
Scarcella, Carmelo ;
Gradkowski, Kamil ;
Duperron, Matthieu ;
Lu, Huihui ;
Zhao, Yan ;
Eason, Cormac ;
Morrissey, Padraic ;
Rensing, Marc ;
Collins, Sean ;
Hwang, How Yuan ;
O'Brien, Peter .
APPLIED SCIENCES-BASEL, 2016, 6 (12)
[3]   Device engineering for silicon photonics [J].
Chen, Xia ;
Li, Chao ;
Tsang, Hon K. .
NPG ASIA MATERIALS, 2011, 3 (01) :34-40
[4]   Compact, lower-power-consumption wavelength tunable laser fabricated with silicon photonic-wire waveguide micro-ring resonators [J].
Chu, Tao ;
Fujioka, Nobuhide ;
Ishizaka, Masashige .
OPTICS EXPRESS, 2009, 17 (16) :14063-14068
[5]  
de Valicourt G, 2017, P OFC
[6]   A Four-Channel Silicon Photonic Carrier With Flip-Chip Integrated Semiconductor Optical Amplifier (SOA) Array Providing >10-dB Gain [J].
Doany, Fuad E. ;
Budd, Russell A. ;
Schares, Laurent ;
Huynh, Tarn N. ;
Wood, Michael G. ;
Kuchta, Daniel M. ;
Dupuis, Nicolas ;
Schow, Clint L. ;
Lee, Benjamin G. ;
Module, M. ;
Sigmund, A. ;
Rehbein, W. ;
Liow, T. Y. ;
Luo, L. W. ;
Lo, G. Q. .
2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2016, :1061-1068
[7]  
Dobbelaere P. D., 2014, P OFC
[8]   A Hybrid Integrated Light Source on a Silicon Platform Using a Trident Spot-Size Converter [J].
Hatori, Nobuaki ;
Shimizu, Takanori ;
Okano, Makoto ;
Ishizaka, Masashige ;
Yamamoto, Tsuyoshi ;
Urino, Yutaka ;
Mori, Masahiko ;
Nakamura, Takahiro ;
Arakawa, Yasuhiko .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2014, 32 (07) :1329-1336
[9]   ALIGNMENT OF GAUSSIAN BEAMS [J].
JOYCE, WB ;
DELOACH, BC .
APPLIED OPTICS, 1984, 23 (23) :4187-4196
[10]   Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate [J].
Keyvaninia, S. ;
Muneeb, M. ;
Stankovic, S. ;
Van Veldhoven, P. J. ;
Van Thourhout, D. ;
Roelkens, G. .
OPTICAL MATERIALS EXPRESS, 2013, 3 (01) :35-46