Growth-Direction Dependent Rapid-Melting-Growth of Ge-on-Insulator (GOI) and its Application to Ge Mesh-Growth

被引：2

作者：

Yokoyama, H. ^{[1
]}

Ohta, Y. ^{[1
]}

Toko, K. ^{[1
]}

Sadoh, T. ^{[1
]}

Miyao, M. ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Nishi Ku, Fukuoka 8190395, Japan

来源：

ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15 | 2011年 / 35卷 / 05期

关键词：

D O I：

10.1149/1.3570777

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Single crystal Ge-on-insulator (GOI) structures with various crystal orientations are necessary for realization of advanced highspeed and multi-functional devices. SiGe mixing triggered rapid-melting-growth of GOI is investigated as a function of seed-orientations and growth-directions. Single crystal growth of (100)-Ge strips is possible for all growth directions using (100)-oriented Si-seeds. However, rotational-growth is observed for some directions when Si-seeds with (110) and (111) orientations are employed. Such rotational-growth is completely suppressed by selecting the growth-directions deviating from the < 111 > direction by more than 35 degrees. Based on this finding, growth of large mesh-patterned Ge layers with (100), (110), and (111) orientations are demonstrated.

引用

页码：55 / 60

页数：6

共 9 条

[1] Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111)
Hamaya, K.
Itoh, H.
Nakatsuka, O.
Ueda, K.
Yamamoto, K.
Itakura, M.
Taniyama, T.
Ono, T.
Miyao, M.
[J]. PHYSICAL REVIEW LETTERS, 2009, 102 (13)
[2] Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy
Kasahara, K.
Yamamoto, K.
Yamada, S.
Murakami, T.
Hamaya, K.
Mibu, K.
Miyao, M.
[J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (09)
[3] Suppression of domain formation in GaN layers grown on Ge(111)
Lieten, R. R.
Degroote, S.
Leys, M.
Borghs, G.
[J]. JOURNAL OF CRYSTAL GROWTH, 2009, 311 (05) : 1306 - 1310
[4] Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETs
Low, T
Li, MF
Samudra, G
Yeo, YC
Zhu, CX
Chin, A
Kwong, DL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (11) : 2430 - 2439
[5] High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth
Miyao, Masanobu
Toko, Kaoru
Tanaka, Takanori
Sadoh, Taizoh
[J]. APPLIED PHYSICS LETTERS, 2009, 95 (02)
[6] Giant Ge-on-Insulator Formation by Si-Ge Mixing-Triggered Liquid-Phase Epitaxy
Miyao, Masanobu
Tanaka, Takanori
Toko, Kaoru
Tanaka, Masanori
[J]. APPLIED PHYSICS EXPRESS, 2009, 2 (04) : 0455031 - 0455033
[7] Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge
Sadoh, T.
Kumano, M.
Kizuka, R.
Ueda, K.
Kenjo, A.
Miyao, M.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (18)
[8] Sze S. M., 1981, PHYS SEMICONDUCTOR D, P11
[9] (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique
Toko, Kaoru
Kurosawa, Masashi
Yokoyama, Hiroyuki
Kawabata, Naoyuki
Sakane, Takashi
Ohta, Yasuharu
Tanaka, Takanori
Sadoh, Taizoh
Miyao, Masanobu
[J]. APPLIED PHYSICS EXPRESS, 2010, 3 (07)

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