Curbing plasma-induced gate oxide damage

被引：0
作者：
Gabriel, CT
机构：
来源：
SOLID STATE TECHNOLOGY | 1999年 / 42卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gate oxide damage occurring during plasma-based processes can degrade product yield by several percentage points. Adding an insulator to the back of the wafer can reduce charging. Optimizing plasma-etching and deposition processes is also essential for minimizing damage. An in-line damage measurement technique can rapidly catch and solve significant charging problems in a fab.
引用
收藏
页码：49 / +
页数：4
相关论文
共 50 条
[31]   ELECTRONIC STUDY OF PLASMA-INDUCED DAMAGE IN GAAS HETEROSTRUCTURES [J].
ZAPPE, HP .
MICROELECTRONIC ENGINEERING, 1993, 20 (03) :227-239
[32]   On the dependence of plasma-induced charging damage on antenna area [J].
Hwang, G.S. ;
Giapis, K.P. .
International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings, 1999, :21-24
[33]   Investigation of plasma-induced damage in silicon trench etching [J].
Kuboi, Shuichi ;
Yamage, Masashi ;
Ishikawa, Satoshi .
INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM) 2016 PROCEEDINGS OF TECHNICAL PAPERS, 2016,
[34]   Plasma-induced damage to n-type GaN [J].
Choi, HW ;
Chua, SJ ;
Raman, A ;
Pan, JS ;
Wee, ATS .
APPLIED PHYSICS LETTERS, 2000, 77 (12) :1795-1797
[35]   FGA effects on plasma-induced damage: Beyond the appearances [J].
Cellere, G ;
Paccagnella, A ;
Valentini, MG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (03) :332-338
[36]   Plasma-induced charging damage in p(+)-polysilicon PMOSFETs [J].
Liu, IM ;
Chen, YY ;
Joshi, AB ;
Kwong, DL .
MICROELECTRONIC DEVICE TECHNOLOGY, 1997, 3212 :275-282
[37]   PLASMA-INDUCED DAMAGE BEHAVIOR IN GAAS BY PHOTOREFLECTANCE SPECTROSCOPY [J].
NAKANISHI, H ;
WADA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B) :6206-6209
[38]   Photoreflectance characterization of the plasma-induced damage in Si substrate [J].
Wada, H ;
Agata, M ;
Eriguchi, K ;
Fujimoto, A ;
Kanashima, T ;
Okuyama, M .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) :2336-2341
[39]   Plasma-induced damage behavior in GaAs by photoreflectance spectroscopy [J].
Nakanishi, Hideo ;
Wada, Kazumi .
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (12 B) :6206-6209
[40]   Identification of plasma-induced damage conditions in VLSI designs [J].
Simon, P ;
Luchies, JM ;
Maly, W .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2000, 13 (02) :136-144
12345