Curbing plasma-induced gate oxide damage

被引：0
作者：
Gabriel, CT
机构：
来源：
SOLID STATE TECHNOLOGY | 1999年 / 42卷 / 03期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gate oxide damage occurring during plasma-based processes can degrade product yield by several percentage points. Adding an insulator to the back of the wafer can reduce charging. Optimizing plasma-etching and deposition processes is also essential for minimizing damage. An in-line damage measurement technique can rapidly catch and solve significant charging problems in a fab.
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页码：49 / +
页数：4
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