GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template

被引：48

作者：

Fu, XingXing ^{[1
,2
]}

Zhang, Bei ^{[1
,2
]}

Kang, XiangNing ^{[1
,2
]}

Deng, JunJing ^{[1
,2
]}

Xiong, Chang ^{[1
,2
]}

Dai, Tao ^{[3
]}

Jiang, XianZhe ^{[1
,2
]}

Yu, TongJun ^{[1
,2
]}

Chen, ZhiZhong ^{[1
,2
]}

Zhang, Guo Yi ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

[2] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[3] Chinese Acad Sci, Inst Policy & Management, Beijing 100190, Peoples R China

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 19期

关键词：

EXTRACTION;

D O I：

10.1364/OE.19.0A1104

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we propose and demonstrate a convenient and flexible approach for preparation large-area of photonic crystals (PhCs) structures on the GaN-based LED chip. The highly-ordered porous anodic alumina (AAO) with pitch of wavelength scale was adopted as a selective dry etching mask for PhCs-pattern transfer. The PhCs with different pore depths were simultaneously formed on the entire surfaces of GaN-based LED chip including ITO, GaN surrounding contacts and the sidewall of the mesa by one-step reactive ion etching (RIE). The light output power improvement of PhCs-based GaN LED was achieved as high as 94% compared to that of the conventional GaN-based LED. (C) 2011 Optical Society of America

引用

页码：A1104 / A1108

页数：5

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