Formation of Ti:sapphire thin films on single-crystal sapphire and GaAs substrates by pulsed laser deposition

被引：2
|
作者：
Atanasov, PA
Tomov, RI
Peshev, ZY
Dikovska, AO
Tsaneva, VN
机构：
来源：
LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING II | 1997年 / 2991卷
关键词：
laser ablation; thin films; Ti:sapphire; laser plume;
D O I：
10.1117/12.273735
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of pulsed laser deposition of Ti - doped and undoped sapphire (alpha - Al2O3) thin films are presented. Three types of doped targets are utilized - monocrystalline and two different ceramics synthesized in vacuum and H-2 ambient, respectively. The doping procedure is related with the potential application of the Ti:sapphire thin films as planar tunable laser media. The influence of the target's type upon the film quality is studied. The films are characterized by XRD, RHEED, and SEM analyses. The optical emission measurements of the laser induced plasma plume are performed.
引用
收藏
页码：267 / 272
页数：6
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