TEM investigation of barrier-like anodic oxide films on aluminum

被引：4

作者：

Schneider, M. ^{[1
]}

Laemmel, C. ^{[1
]}

Huebner, R. ^{[2
]}

Gierth, U. ^{[1
]}

Michaelis, A. ^{[1
,3
]}

机构：

[1] Fraunhofer IKTS Dresden, Winterbergstr 28, D-01277 Dresden, Germany

[2] Helmholtz Zentrum Dresden Rossendorf, D-01328 Dresden, Germany

[3] Tech Univ Dresden, Inst Werkstoffwissensch, D-01069 Dresden, Germany

来源：

SURFACE AND INTERFACE ANALYSIS | 2016年 / 48卷 / 08期

关键词：

pulse anodizing; high field mechanism; anodic oxide; aluminum; PULSE ANODIZATION; VALVE METALS; GROWTH; LAYERS;

D O I：

10.1002/sia.5913

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The present study focuses mainly on non-electrochemical investigation of thin barrier-like oxide films formed under different pulse frequencies. The TEM investigation principally shows amorphous oxide films, which are dense and free of pores. The various pulse experiments have no influence on these film properties. The oxide growth factor was calculated to 1.06 nmV(-1) in all cases. The microstructure (crystallographic orientation, grain boundaries) of the underlying substrate does not affect the oxide films. Independent of the pulse frequency, electrolyte species are not incorporated into the oxide films. The evidenced differences in the film thickness are caused by intrinsic peculiarities of the high-field mechanism of growing oxide. Copyright (C) 2015 John Wiley & Sons, Ltd.

引用

页码：913 / 919

页数：7

共 42 条

[1]

Abele M., 1994, GALVANOTECHNIK, V85, P2505

[2]

BUFFETEAU T, 1988, MIKROCHIM ACTA, V2, P23, DOI 10.1007/BF01349714

[3] Fabrication of enhanced anodic aluminum oxide performance at room temperatures using hybrid pulse anodization with effective cooling [J].

Chung, C. K. ;

Chang, W. T. ;

Liao, M. W. ;

Chang, H. C. ;

Lee, C. T. .

ELECTROCHIMICA ACTA, 2011, 56 (18) :6489-6497

[4] THE USE OF PULSE RECTIFIERS FOR ANODIZING ALUMINUM [J].

COLOMBINI, C .

TRANSACTIONS OF THE INSTITUTE OF METAL FINISHING, 1988, 66 :142-143

[5] Residual flaws due to formation of oxygen bubbles in anodic alumina [J].

Crossland, AC ;

Habazaki, H ;

Shimizu, K ;

Skeldon, P ;

Thompson, GE ;

Wood, GC ;

Zhou, X ;

Smith, CJE .

CORROSION SCIENCE, 1999, 41 (10) :1945-1954

[6] Aluminium oxide tunnel junctions: influence of preparation technique, sample geometry and oxide thickness [J].

Diesing, D ;

Hassel, AW ;

Lohrengel, MM .

THIN SOLID FILMS, 1999, 342 (1-2) :282-290

[7] Combined in situ PM-IRRAS/QCM studies of water adsorption on plasma modified aluminum oxide/aluminum substrates [J].

Giner, Ignacio ;

Maxisch, Michael ;

Kunze, Christian ;

Grundmeier, Guido .

APPLIED SURFACE SCIENCE, 2013, 283 :145-153

[8] FOURIER-TRANSFORM IR SPECTROSCOPICAL INVESTIGATION OF THE ANODIC OXIDE-FILMS ON ALUMINUM .1. STRUCTURAL FEATURES DURING OXIDE-FILMS FORMATION [J].

HANDKE, M ;

PALUSZKIEWICZ, C ;

WYRWA, W .

MATERIALS CHEMISTRY, 1980, 5 (03) :199-212

[9]

Hassel A. W., 1994, B CHEM TECHNOL MACED, V13, P49

[10]

HASSEL AW, 1997, THESIS

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