Vapor pressures of precursors for the CVD of silicon-based films

被引：7

作者：

Alcott, GR

van de Sanden, RMCM

Kondic, S

Linden, JL

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] TNO, TPD Div Models & Proc, NL-5600 AN Eindhoven, Netherlands

来源：

CHEMICAL VAPOR DEPOSITION | 2004年 / 10卷 / 01期

关键词：

Chemical vapor deposition - Numerical methods - Silicon - Thermal variables measurement - Thermodynamic stability - Thin films - Transport properties - Vaporization;

D O I：

10.1002/cvde.200306145

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thermal stability and vapor pressure measurement for a number Of SiO2 precursors are studied. For the first time results from 1,2-bis(trimethyl)siloxyethane (TMSE), (3-glycidoxypropyl) trimethylethoxysilane (Glymol) and 1H,1H, 2H, 2H-perfluorooctyltriethoxysilane (PTES) are reported. Results from tetraethoxysilane (TEOS), tripropylsilane (TPS) are found to agree with previously published values. Measurements are made in the temperatures range of 20 to 200 degreesC and values are fitted using the integrated Clausius-Claperon equation. Enthalpies of vaporization are calculated.

引用

页码：20 / +

页数：4

共 7 条

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