共 31 条
- [21] Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN CHINESE PHYSICS, 2005, 14 (04): : 830 - 833
- [22] InGaN/GaN multi-quantum well metal-insulator semiconductor photodetectors with photo-CVD SiO2 layers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B): : 2008 - 2010
- [24] Effect of AlGaN/GaN Strained-Layer Superlattices Under layer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD MALAYSIA ANNUAL PHYSICS CONFERENCE 2010 (PERFIK-2010), 2011, 1328 : 232 - +
- [25] Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar (112<overline>2) substrate using cathodoluminescence in transmission electron microscopy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024, 42 (02):
- [29] Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II, 1998, 3284 : 113 - 121