Ta2O5 Solar-Blind Photodetectors

被引：15

作者：

Chiu, C. J. ^{[1
]}

Weng, W. Y. ^{[1
]}

Hsueh, T. J. ^{[3
]}

Chang, S. J. ^{[1
,2
]}

Huang, G. J. ^{[1
]}

Hsueh, H. T.

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Inst Nanotechnol & Microsyst Engn, Dept Elect Engn,Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Natl Nano Device Labs, Tainan 741, Taiwan

来源：

IEEE SENSORS JOURNAL | 2011年 / 11卷 / 10期

关键词：

Photodetectors; solar-blind; Ta2O5; TANTALUM-PENTOXIDE; FILMS; SILICON; SI;

D O I：

10.1109/JSEN.2011.2122332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the fabrication of Ta2O5 solar-blind photodetectors. It was found that one can transformation amorphous Ta2O5 to crystalline beta-Ta2O5 through high-temperature (i.e., > 700 degrees C) annealing. It was also found that ultraviolet-to-visible rejection ratio of the 900 degrees C-annealed sample was around 9.2 x 10(2) when biased at 10 V.

引用

页码：2372 / 2373

页数：2

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