In-the-field PID related experiences

被引:26
作者
Martinez-Moreno, F. [1 ]
Figueiredo, G. [2 ]
Lorenzo, E. [1 ]
机构
[1] Univ Politecn Madrid, Inst Energia Solar, Grp Sistemas Fotovolta, ETSI Sistemas Telecomunicac, Ctra Valencia km 7,Campus Sur UPM, Madrid 28031, Spain
[2] Univ Sao Paulo IEE USP, Inst Energia & Ambiente, Lab Sistemas Fotovolta, Cidade Univ,Av Prof Luciano Gualberto 1289, BR-05508900 Sao Paulo, Brazil
关键词
Potential induced degradation; Operating voltage; In-the-field PID detection; In-the-field PID prediction; PID effective power losses; Predictive maintenance; POTENTIAL-INDUCED DEGRADATION; HIGH-VOLTAGE BIAS; PHOTOVOLTAIC MODULES; STACKING-FAULTS;
D O I
10.1016/j.solmat.2017.09.037
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Potential induced degradation could considerably decrease the performance of photovoltaic systems which operate at high DC voltages. Nonetheless, methodologies for dealing with it in field are not clearly yet defined. This work explains the kinetics of this phenomenon in the field and presents an assessment of its occurrence, detection and prediction in real PV installations. Measurements of the instantaneous operating voltages of the photovoltaic module as a verification routine and predictive maintenance is proposed here as a reasonable and most accurate way of analyzing the actual power losses of the photovoltaic system related to this kind of degradation, as well as detecting and predicting it. Potential induced degradation prevention and recovery have also been carried out by the application of reverse voltage during the night, showing the validity of this technique. A literature review for the PID dynamics of different kinds of photovoltaic cell technologies and development of PID test methodologies and standards is also presented.
引用
收藏
页码:485 / 493
页数:9
相关论文
共 59 条
[1]  
[Anonymous], 28159 EUR EN
[2]  
[Anonymous], P 13 IEEE PHOT SPEC
[3]  
[Anonymous], P 28 EUPVSEC PAR FRA
[4]  
[Anonymous], P SPIE
[5]  
[Anonymous], 2017, PHOTOVOLTAICS REPORT
[6]  
[Anonymous], P 37 IEEE PHOT SPEC
[7]  
[Anonymous], P 31 EUPVSEC HAMB GE
[8]  
[Anonymous], P 32 EUPVSEC MUN GER
[9]  
[Anonymous], CITED PICKEREL K CAN
[10]  
[Anonymous], P 27 EUPVSEC FRANKF