Low Resistance TiO2/p-Si Heterojunction for Tandem Solar Cells

被引：6

作者：

Asmontas, Steponas ^{[1
]}

Anbinderis, Maksimas ^{[1
]}

Gradauskas, Jonas ^{[1
]}

Juskenas, Remigijus ^{[1
]}

Leinartas, Konstantinas ^{[1
]}

Lucun, Andzej ^{[1
]}

Selskis, Algirdas ^{[1
]}

Staisiunas, Laurynas ^{[1
]}

Stanionyte, Sandra ^{[1
]}

Suziedelis, Algirdas ^{[1
]}

Silenas, Aldis ^{[1
]}

Sirmulis, Edmundas ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol, Savanoriu Ave 231, LT-02300 Vilnius, Lithuania

来源：

MATERIALS | 2020年 / 13卷 / 12期

关键词：

thin films; solar cells; TiO2; p-Si heterojunction; atomic layer deposition; ELECTRICAL-PROPERTIES; TIO2; EFFICIENCY; FILMS;

D O I：

10.3390/ma13122857

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Niobium-doped titanium dioxide (Ti1-xNbxO2) films were grown onp-type Si substrates at low temperature (170 degrees C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 degrees C in an H(2)atmosphere for 30 min. It was shown that the Ti0.72Nb0.O-28(2)/p(+)-Si heterojunction fabricated on low resistivity silicon (10(-3)omega cm) had linear current-voltage characteristic with a specific contact resistivity as low as 23 m omega center dot cm(2). As the resistance dependence on temperature revealed, the current across the Ti0.72Nb0.28O2/p(+)-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.

引用

页码：1 / 10

页数：10

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