Group IV photonic devices for the mid-infrared

被引:0
作者
Mashanovich, G. Z. [1 ]
Nedeljkovic, M. [1 ]
Milosevic, M. M. [2 ]
Hu, Y. [1 ]
Gardes, F. Y. [1 ]
Thomson, D. J. [1 ]
Masaud, T. -B. [1 ]
Jaberansary, E. [1 ]
Chong, H. M. H. [1 ]
Soref, R. [3 ,4 ]
Reed, G. T. [1 ]
机构
[1] Univ Southampton, Sch Elect & Comp Sci, Southampton, Hants, England
[2] Univ Surrey, Dept Elect Engn, Guildford, Surrey, England
[3] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA
[4] Univ Massachusetts, Dept Engn, Boston, MA 02125 USA
来源
SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS III | 2012年 / 8431卷
基金
英国工程与自然科学研究理事会;
关键词
silicon photonics; mid-infrared; optical modulators; waveguides; RIB WAVE-GUIDES; SILICON PHOTONICS; MODULATION;
D O I
10.1117/12.922814
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Group IV mid-infrared photonics is attracting more research interest lately. The main reason is a host of potential applications ranging from sensing, to medicine, to free space communications and infrared countermeasures. The field is, however, in its infancy and there are several serious challenges to be overcome before we see progress similar to that in the near-infrared silicon photonics. The first is to find suitable material platforms for the mid-infrared. In this paper we present experimental results for passive mid-infrared photonic devices realised in silicon-on-insulator, silicon-on-sapphire, and silicon on porous silicon. We also present relationships for the free-carrier induced electro-refraction and electro-absorption in silicon and germanium in the mid-infrared wavelength range. Electro-absorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electro-refraction modulation. We examine the wavelength dependence of electro-refraction and electro-absorption, finding that the predictions suggest longer-wave modulator designs will in many cases be different than those used in the telecom range.
引用
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页数:8
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