Electroluminescence properties of InGaN/AlGaN/GaN light emitting diodes with quantum wells

被引：0

作者：

Yunovich, AE ^{[1
]}

Kudryashov, VE

Turkin, AN

Kovalev, AN

Manyakhin, FI

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow, Russia

[2] Moscow Steel & Alloys Inst, Moscow 117936, Russia

来源：

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 1999年 / 4卷

关键词：

light-emitting diodes; heterostructures; quantum wells; nitrides; luminescence;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electroluminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with single and multiple quantum wells (QWs) are analyzed by models of radiative recombination in 2D-structures with band tails. Equations of the model fit spectra quite good in a wide range of currents. Parameters of the fit are discussed and compared for single and multiple QWs. Tunnel effects play a sufficient role in blue LEDs with single QWs at low currents; they can be neglected in LEDs with multiple QWs. A new spectral band was detected at the high energy side of the spectra of green LEDs with multiple QWs; it is attributed with large scale inhomogenities of In distribution in InGaN QWs.*).

引用

页数：6

共 9 条

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Zolin, KG ;

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SEMICONDUCTORS, 1997, 31 (11) :1123-1127

[3]

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[4]

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[5]

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[6]

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[7]

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[8]

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[9] Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells [J].

Zolina, KG ;

Kudryashov, VE ;

Turkin, AN ;

Yunovich, AE .

SEMICONDUCTORS, 1997, 31 (09) :901-907

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