Current injection 1.54 μm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells

被引：2
|
作者：
Al Tahtamouni, T. M. [1 ]
Li, J. [2 ]
Lin, J. Y. [2 ]
Jiang, H. X. [2 ]
机构：
[1] Qatar Univ, Coll Arts & Sci, Mat Sci & Technol Program, Doha 2713, Qatar
[2] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
来源：
OPTICAL MATERIALS EXPRESS | 2016年 / 6卷 / 11期
关键词：
IMPLANTED GAN; ERBIUM; PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; EXCITATION; CATHODOLUMINESCENCE; SEMICONDUCTORS; LUMINESCENCE; IONS;
D O I：
10.1364/OME.6.003476
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the growth, fabrication and electroluminescence (EL) characteristics of light-emitting diodes (LEDs) based on Er-doped GaN (GaN: Er) and GaN/AlGaN multiple quantum well (MQW: Er) active layers. The LED structures were grown using metal organic chemical vapor deposition and processed into 300x300 mu m(2) mesa devices. The LEDs exhibit emission at 1.54 mu m, due to Er intra-4f transitions, under forward bias conditions. The 1.54 mu m emission properties from LEDs with MQWs:Er and GaN:Er active layers were probed. The LEDs fabricated using MQWs:Er exhibited improved performance as evidenced by a factor of 4 enhancement in the optical power output as compared to conventional GaN:Er based LEDs. The results demonstrate a significant advance in the development of current injected, chip-scale emitters and waveguide amplifiers based on Er doped semiconductors. (C) 2016 Optical Society of America
引用
收藏
页码：3476 / 3481
页数：6
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