Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

被引：3

作者：

Blumenthal, Sarah ^{[1
]}

Rieger, Torsten ^{[2
]}

Meertens, Doris ^{[3
]}

Pawlis, Alexander ^{[2
]}

Reuter, Dirk ^{[1
]}

As, Donat J. ^{[1
]}

机构：

[1] Univ Paderborn, Dept Phys, Warburger Str 100, D-33098 Paderborn, Germany

[2] Forschungszentrum Julich, Peter Grunberg Inst, D-52428 Julich, Germany

[3] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, D-52428 Julich, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2018年 / 255卷 / 03期

关键词：

cubic crystals; GaN; molecular beam epitaxy; quantum dots; STRANSKI-KRASTANOW GROWTH; OPTICAL-PROPERTIES; OPERATION; LASER;

D O I：

10.1002/pssb.201600729

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the stacking of self-assembled cubic GaN quantum dots (QDs) grown in Stranski-Krastanov (SK) growth mode. The number of stacked layers is varied to compare their optical properties. The growth is in situ controlled by reflection high energy electron diffraction to prove the SK QD growth. Atomic force and transmission electron microscopy show the existence of wetting layer and QDs with a diameter of about 10nm and a height of about 2nm. The QDs have a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence measurements show an increase of the intensity with increasing number of stacked QD layers. Furthermore, a systematic blue-shift of 120meV is observed with increasing number of stacked QD layers. This blueshift derives from a decrease in the QD height, because the QD height has also been the main confining dimension in our QDs.

引用

页数：6

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