Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

被引：3

作者：

Blumenthal, Sarah ^{[1
]}

Rieger, Torsten ^{[2
]}

Meertens, Doris ^{[3
]}

Pawlis, Alexander ^{[2
]}

Reuter, Dirk ^{[1
]}

As, Donat J. ^{[1
]}

机构：

[1] Univ Paderborn, Dept Phys, Warburger Str 100, D-33098 Paderborn, Germany

[2] Forschungszentrum Julich, Peter Grunberg Inst, D-52428 Julich, Germany

[3] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, D-52428 Julich, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2018年 / 255卷 / 03期

关键词：

cubic crystals; GaN; molecular beam epitaxy; quantum dots; STRANSKI-KRASTANOW GROWTH; OPTICAL-PROPERTIES; OPERATION; LASER;

D O I：

10.1002/pssb.201600729

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the stacking of self-assembled cubic GaN quantum dots (QDs) grown in Stranski-Krastanov (SK) growth mode. The number of stacked layers is varied to compare their optical properties. The growth is in situ controlled by reflection high energy electron diffraction to prove the SK QD growth. Atomic force and transmission electron microscopy show the existence of wetting layer and QDs with a diameter of about 10nm and a height of about 2nm. The QDs have a truncated pyramidal form and are vertically aligned in growth direction. Photoluminescence measurements show an increase of the intensity with increasing number of stacked QD layers. Furthermore, a systematic blue-shift of 120meV is observed with increasing number of stacked QD layers. This blueshift derives from a decrease in the QD height, because the QD height has also been the main confining dimension in our QDs.

引用

页数：6

共 50 条

[31] Structural and optical properties of type IIGaSb GaAs self-assembled quantum dots grown by molecular beam epitaxy
Suzuki, K
Hogg, RA
Arakawa, Y
JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) : 8349 - 8352
[32] Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy
Nakata, Y
Sugiyama, Y
Futatsugi, T
Yokoyama, N
JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 713 - 719
[33] Controlling anisotropy of GaSb(As)/GaAs quantum dots by self-assembled molecular beam epitaxy
Jiang, Chao
Sakaki, Hiroyuki
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 17 - 20
[34] Molecular beam epitaxy based growth of cubic GaN quantum dots
Schupp, T.
Meisch, T.
Neuschl, B.
Feneberg, M.
Thonke, K.
Lischka, K.
As, D. J.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 2011, 8 (05): : 1495 - 1498
[35] Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy
Umeno, K.
Furukawa, Y.
Urakami, N.
Noma, R.
Mitsuyoshi, S.
Wakahara, A.
Yonezu, H.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (10): : 2772 - 2776
[36] Optical characteristics of hexagonal and cubic GaN self-assembled quantum dots
Cho, YH
Kown, BJ
Barjon, J
Brault, J
Daudin, B
Mariette, H
Dang, L
ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, 2004, 5352 : 8 - 15
[37] Optical properties of hexagonal and cubic GaN self-assembled quantum dots
Cho, YH
Kwon, BJ
Barjon, J
Brault, J
Daudin, B
Mariette, H
Dang, LS
2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1173 - 1176
[38] Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy
Cui, J
He, Q
Jiang, XM
Fan, YL
Yang, XJ
Xue, F
Jiang, ZM
APPLIED PHYSICS LETTERS, 2003, 83 (14) : 2907 - 2909
[39] Optical properties of hexagonal and cubic GaN self-assembled quantum dots
Cho, Y.-H. (yonghcho@chungbuk.ac.kr), (Wiley-VCH Verlag):
[40] Self-assembled InAs/Si quantum dot stacks grown by molecular beam epitaxy
Sharma, PC
Tang, YS
Alt, KW
Wang, KL
SILICON-BASED OPTOELECTRONICS II, 2000, 3953 : 46 - 58

← 1 2 3 4 5 →