Effect of wet-chemical substrate pretreatment on electronic interface properties and recombination losses of a-Si:H/c-Si and a-SiNx:H/c-Si hetero-interfaces

被引：17

作者：

Angermann, Heike ^{[1
]}

Wuensch, Frank ^{[2
]}

Kunst, Marinus ^{[2
]}

Laades, Abdelazize ^{[3
]}

Stuerzebecher, Uta ^{[3
]}

Conrad, Erhard ^{[1
]}

Korte, Lars ^{[1
]}

Schmidt, Manfred ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, Kekulestr 5, D-12489 Berlin, Germany

[2] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Solare Brennstoffe & Energiespeichermat, D-14109 Berlin, Germany

[3] CiS, Inst Mikrosensorik GmbH, SolarZentrum Erfurt, D-99099 Erfurt, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3 | 2011年 / 8卷 / 03期

关键词：

recombination; passivation; crystalline silicon; hydrogenated amorphous silicon; silicon nitride; HETERO-JUNCTION; SOLAR-CELLS;

D O I：

10.1002/pssc.201000236

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Surface charge, surface state density and interface recombination behavior on polished float zone (FZ) solar cell substrates were investigated after various wet-chemical pre-cleaning procedures and deposition of amorphous silicon (a-Si:H) or silicon nitride (a-SiNx: H). Applying surface photo voltage (SPV), microwave detected photo conductance decay (mu W-PCD) and transient microwave conduction (TRMC) measurements, electronic interface properties were monitored repeatedly during the preparation processes. As shown for an inverted a-Si:H/c-Si hetero-junction structure, with front side passivation by a-SiNx:H and a p-type a-Si:H emitter on the rear side, the effect of optimised wet-chemical pre-treatment can be preserved during the subsequent soft plasma enhanced chemical vapour deposition of a-Si:H or a-SiNx:H. This leads to hetero-interfaces with low interface recombination velocities. These results were compared to previously reported findings, obtained on textured Czochralski (CZ) single crystalline substrates. a-SiNx:H is known to result in a field effect passivation. Nevertheless a strong influence of wet-chemical treatments on surface charge and recombination losses was observed on both flat and textured a-SiNx:H/c-Si interfaces. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：879 / 882

页数：4

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