Effects of surface treatments on interfacial self-cleaning in atomic layer deposition of Al2O3 on InSb

被引：33

作者：

Hou, C. H. ^{[1
]}

Chen, M. C. ^{[1
]}

Chang, C. H. ^{[1
]}

Wu, T. B. ^{[1
]}

Chiang, C. D. ^{[2
]}

Luo, J. J. ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Chung Shan Inst Sci & Technol, Tao Yuan, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2008年 / 155卷 / 09期

关键词：

D O I：

10.1149/1.2948386

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The atomic layer deposition (ALD) of Al2O3 using trimethylaluminum (TMA) as a metal precursor on an InSb substrate with or without surface pretreatments was investigated. It was found that both in situ TMA/Ar purging (half-ALD cycle) and ex situ CP4A (HNO3:HF:CH3COOH:H2O=2:1:1:10) chemical etching can remove the native oxides on InSb before ALD of Al2O3, and lead to a native-oxides-free Al2O3/InSb structure. Characteristics of current density-voltage and capacitance-voltage were also investigated to evaluate the insulative and interface quality in a Pt/Al2O3/InSb metal-oxide-semiconductor structure. (C) 2008 The Electrochemical Society.

引用

页码：G180 / G183

页数：4

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