Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

被引：100
作者：
Zhou, Guangdong [1 ]
Sun, Bai [1 ,2 ]
Yao, Yanqing [1 ]
Zhang, Huihui [1 ]
Zhou, Ankun [3 ,4 ]
Alameh, Kamal [5 ]
Ding, Baofu [1 ,5 ]
Song, Qunliang [1 ,5 ,6 ]
机构：
[1] Southwest Univ, Inst Clean Energy & Adv Mat ICEAM, Chongqing 400715, Peoples R China
[2] Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong 999077, Hong Kong, Peoples R China
[3] Chinese Acad Sci, Kunming Inst Bot, Kunming 650201, Peoples R China
[4] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[5] Edith Cowan Univ, Electron Sci Res Inst, 270 Joondalup Dr, Joondalup, WA 6027, Australia
[6] Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 14期
基金：
中国国家自然科学基金;
关键词：
DATA-STORAGE; HYSTERESIS; MECHANISM; DEVICES; FILMS; NANODEVICES; CHARGES; MATRIX;
D O I：
10.1063/1.4962655
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
MoSe2-doped ultralong Se microwires of length/diameter ratio in the order of similar to 240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of similar to 10(2) for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour. Published by AIP Publishing.
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页数：5
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