Magnetism in semiconducting molybdenum dichalcogenides

被引：113

作者：

Guguchia, Z. ^{[1
,2
]}

Kerelsky, A. ^{[1
]}

Edelberg, D. ^{[1
]}

Banerjee, S. ^{[3
]}

von Rohr, F. ^{[4
]}

Scullion, D. ^{[5
]}

Augustin, M. ^{[5
]}

Scully, M. ^{[5
]}

Rhodes, D. A. ^{[6
]}

Shermadini, Z. ^{[2
]}

Luetkens, H. ^{[2
]}

Shengelaya, A. ^{[7
,8
]}

Baines, C. ^{[2
]}

Morenzoni, E. ^{[2
]}

Amato, A. ^{[2
]}

Hone, J. C. ^{[6
]}

Khasanov, R. ^{[2
]}

Billinge, S. J. L. ^{[3
,9
]}

Santos, E. ^{[5
]}

Pasupathy, A. N. ^{[1
]}

Uemura, Y. J. ^{[1
]}

机构：

[1] Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA

[2] Paul Scherrer Inst, Lab Muon Spin Spect, CH-5232 Villigen, Switzerland

[3] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

[4] Univ Zurich, Dept Chem, Winterthurerstr 190, CH-8057 Zurich, Switzerland

[5] Queens Univ Belfast, Sch Math & Phys, Belfast, Antrim, North Ireland

[6] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA

[7] Tbilisi State Univ, Dept Phys, Chavchavadze 3, GE-0128 Tbilisi, Georgia

[8] I Javakhishvili Tbilisi State Univ, Andronikashvili Inst Phys, Tamarashvili Str 6, GE-0177 Tbilisi, Georgia

[9] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA

来源：

SCIENCE ADVANCES | 2018年 / 4卷 / 12期

基金：

瑞士国家科学基金会; 英国工程与自然科学研究理事会;

关键词：

METAL; SPIN; FERROMAGNETISM;

D O I：

10.1126/sciadv.aat3672

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Transition metal dichalcogenides (TMDs) are interesting for understanding the fundamental physics of two-dimensional (2D) materials as well as for applications to many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below T-M = 40 and 100 K in bulk semiconducting TMDs 2H-MoTe2 and 2H-MoSe2, respectively, by means of muon spin rotation (mSR), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations. The mSR measurements show the presence of large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites, which are randomly distributed in the lattice at the subpercent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9 to 2.8 mu B. Further, we find that the magnetic order stabilized in 2H-MoTe2 and 2H-MoSe2 is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe2 and 2H-MoSe2 as a new class of magnetic semiconductors and open a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors.

引用

页数：8

共 53 条

[1] Large, non-saturating magnetoresistance in WTe2 [J].