Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers

被引:46
作者
Gritsenko, Vladimir A. [1 ,2 ]
Islamov, Damir R. [1 ,2 ]
Perevalov, Timofey V. [1 ,2 ]
Aliev, Vladimir Sh. [1 ]
Yelisseyev, Alexander P. [3 ]
Lomonova, Elena E. [4 ]
Pustovarov, Vladimir A. [5 ]
Chin, Albert [6 ]
机构
[1] Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, 2 Pirogov St, Novosibirsk 630090, Russia
[3] Sobolev Inst Geol & Mineral SB RAS, 3 Koptyug Ave, Novosibirsk 630090, Russia
[4] RAS, Prokhorov Gen Phys Inst, 38 Vavilov St, Moscow 119991, Russia
[5] Ural Fed Univ, 19 Mira St, Ekaterinburg 620002, Russia
[6] Natl Chiao Tung Univ, 1001 Univ Rd, Hsinchu 300, Taiwan
基金
俄罗斯科学基金会;
关键词
THIN-FILMS; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; HFO2; DEFECTS; TRANSPORT; OXIDE;
D O I
10.1021/acs.jpcc.6b05457
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic properties of HfO2, in particular, luminescence and charge transport, are determined by defects and traps. The origin of luminescence centers and traps of charge carriers in a HfO2 crystal was studied using luminescence spectroscopy, charge transport, and quantum chemical calculation. The 2.7 eV luminescence band and 5.2 eV absorption/luminescence excitation band are associated with an oxygen vacancy. The thermal activation energy 1.25 eV, estimated from the charge transport and thermoluminescence experiment, is equal to half of the Stokes shift in photoluminescence spectra. Hence, oxygen vacancies are supposed to operate as electron traps in HfO2, and the charge transport is described by phonon-assisted tunneling between traps.
引用
收藏
页码:19980 / 19986
页数:7
相关论文
共 49 条
  • [41] Spectroscopic properties of oxygen vacancies in monoclinic HfO2 calculated with periodic and embedded cluster density functional theory
    Ramo, D. Munoz
    Gavartin, J. L.
    Shluger, A. L.
    Bersuker, G.
    [J]. PHYSICAL REVIEW B, 2007, 75 (20)
  • [42] Theoretical prediction of intrinsic self-trapping of electrons and holes in monoclinic HfO2
    Ramo, D. Munoz
    Shluger, A. L.
    Gavartin, J. L.
    Bersuker, G.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 99 (15)
  • [43] Luminescence of intrinsic and extrinsic defects in hafnium oxide films
    Rastorguev, A. A.
    Belyi, V. I.
    Smirnova, T. P.
    Yakovkina, L. V.
    Zamoryanskaya, M. V.
    Gritsenko, V. A.
    Wong, Hei
    [J]. PHYSICAL REVIEW B, 2007, 76 (23)
  • [44] High-K materials and metal gates for CMOS applications
    Robertson, John
    Wallace, Robert M.
    [J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2015, 88 : 1 - 41
  • [45] Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks
    Strzhemechny, Y. M.
    Bataiev, M.
    Tumakha, S. P.
    Goss, S. H.
    Hinkle, C. L.
    Fulton, C. C.
    Lucovsky, G.
    Brillson, L. J.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (01): : 232 - 243
  • [46] Observation of bulk HfO2 defects by spectroscopic ellipsometry
    Takeuchi, H
    Ha, D
    King, TJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04): : 1337 - 1341
  • [47] A Physical Model of the Temperature Dependence of the Current Through SiO2/HfO2 Stacks
    Vandelli, L.
    Padovani, A.
    Larcher, L.
    Southwick, R. G., III
    Knowlton, W. B.
    Bersuker, G.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (09) : 2878 - 2887
  • [48] Process-dependent defects in Si/HfO2/Mo gate oxide heterostructures
    Walsh, S.
    Fang, L.
    Schaeffer, J. K.
    Weisbrod, E.
    Brillson, L. J.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (05)
  • [49] Defect energy levels in HfO2 high-dielectric-constant gate oxide -: art. no. 183505
    Xiong, K
    Robertson, J
    Gibson, MC
    Clark, SJ
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (18) : 1 - 3