Oxygen Vacancy in Hafnia as a Blue Luminescence Center and a Trap of Charge Carriers

被引:46
作者
Gritsenko, Vladimir A. [1 ,2 ]
Islamov, Damir R. [1 ,2 ]
Perevalov, Timofey V. [1 ,2 ]
Aliev, Vladimir Sh. [1 ]
Yelisseyev, Alexander P. [3 ]
Lomonova, Elena E. [4 ]
Pustovarov, Vladimir A. [5 ]
Chin, Albert [6 ]
机构
[1] Rzhanov Inst Semicond Phys SB RAS, 13 Lavrentiev Ave, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, 2 Pirogov St, Novosibirsk 630090, Russia
[3] Sobolev Inst Geol & Mineral SB RAS, 3 Koptyug Ave, Novosibirsk 630090, Russia
[4] RAS, Prokhorov Gen Phys Inst, 38 Vavilov St, Moscow 119991, Russia
[5] Ural Fed Univ, 19 Mira St, Ekaterinburg 620002, Russia
[6] Natl Chiao Tung Univ, 1001 Univ Rd, Hsinchu 300, Taiwan
基金
俄罗斯科学基金会;
关键词
THIN-FILMS; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; HFO2; DEFECTS; TRANSPORT; OXIDE;
D O I
10.1021/acs.jpcc.6b05457
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic properties of HfO2, in particular, luminescence and charge transport, are determined by defects and traps. The origin of luminescence centers and traps of charge carriers in a HfO2 crystal was studied using luminescence spectroscopy, charge transport, and quantum chemical calculation. The 2.7 eV luminescence band and 5.2 eV absorption/luminescence excitation band are associated with an oxygen vacancy. The thermal activation energy 1.25 eV, estimated from the charge transport and thermoluminescence experiment, is equal to half of the Stokes shift in photoluminescence spectra. Hence, oxygen vacancies are supposed to operate as electron traps in HfO2, and the charge transport is described by phonon-assisted tunneling between traps.
引用
收藏
页码:19980 / 19986
页数:7
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