Ultra-thin Film EUV Resists beyond 20nm Lithography

被引：7

作者：

Nakagawa, Hiroki ^{[1
]}

Fujisawa, Tomohisa ^{[2
]}

Goto, Kentaro ^{[1
]}

Kimura, Tooru ^{[2
]}

Kai, Toshiyuki

Hishiro, Yoshi ^{[1
]}

机构：

[1] JSR Micro Inc, Adv Lithog Res Grp, 1280 N Mathilda Ave, Sunnyvale, CA 94809 USA

[2] JSR corp, Semicond Mat Lab, Fine Elect Res Lab, Yokaichi, Mie 5108552, Japan

来源：

ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVIII | 2011年 / 7972卷

关键词：

lithography; EUV; multi layer; Si-ARC; OHM;

D O I：

10.1117/12.879303

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Extreme ultraviolet (EUV) lithography is one of the most promising technologies for achieving 22nm HP lithography and beyond. EUV resist is required to improve resolution limit down to less than 20nm hp. To achieve such a performance, innovative materials' development is necessary under ultra-thin resist film condition for preventing line collapse. In addition, more refined etching processes compatible with ultra-thin resist film are needed. In this study, we will report our several approaches for both materials and processes towards forming less than 20nm HP pattern under ultra-thin film condition. We will also introduce our tri-layer system formed with combination of Si-ARC stack and organic hard mask (OHM) stack for refined etching process.

引用

页数：7

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