Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

被引:10
作者
Hu, Siqi [1 ,2 ]
Tian, Ruijuan [1 ,2 ]
Luo, Xiaoguang [3 ]
Yin, Rui [1 ,2 ]
Cheng, Yingchun [3 ]
Zhao, Jianlin [1 ,2 ]
Wang, Xiaomu [4 ]
Gan, Xuetao [1 ,2 ]
机构
[1] Northwestern Polytech Univ, Sch Sci, MOE Key Lab Mat Phys & Chem Extraordinary Condit, Xian 710072, Shaanxi, Peoples R China
[2] Northwestern Polytech Univ, Sch Sci, Shaanxi Key Lab Opt Informat Technol, Xian 710072, Shaanxi, Peoples R China
[3] Northwestern Polytech Univ, Shannxi Inst Flexible Elect, Xian 710072, Shaanxi, Peoples R China
[4] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China
关键词
black phosphorus; reconfigurable heterostructure; photovoltaic effect; photocurrent; GRAPHENE; PHOTODETECTORS; SEMICONDUCTOR;
D O I
10.1088/1674-1056/27/12/128502
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We demonstrate a reconfigurable black phosphorus electrical field transistor, which is van der Waals heterostructured with few-layer graphene and hexagonal boron nitride flakes. Varied homojunctions could be realized by controlling both source-drain and top-gate voltages. With the spatially resolved scanning photocurrent microscopy technique, photovoltaic photocurrents originated from the band-bending regions are observed, confirming nine different configurations for each set of fixed voltages. In addition, as a phototransistor, high responsivity (similar to 800 mA/W) and fast response speed (similar to 230 mu s) are obtained from the device. The reconfigurable van der Waals heterostructured transistors may offer a promising structure towards electrically tunable black phosphorus-based optoelectronic devices.
引用
收藏
页数:6
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