Influence of post-annealing time on properties of ZnO: (Li, N) thin films prepared by ion beam enhanced deposition method

被引：4

作者：

Xie, Jiansheng ^{[1
]}

Lu, Qi-fei ^{[1
]}

Chen, Qiang ^{[1
]}

机构：

[1] Changzhou Univ, Funct Mat Lab, Changzhou 213016, Jiangsu, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 05期

关键词：

OPTICAL-PROPERTIES; ZINC-OXIDE; TEMPERATURE; FABRICATION; LITHIUM;

D O I：

10.1007/s10854-014-2466-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lithium and nitrogen dual-doped ZnO films [ZnO: (Li, N)] with Li concentrations of 4 at.% were grown on glass substrates by ion beam enhanced deposition (IBED) and then annealing in Ar flow. The influence of post-annealing time on their structural, optical and electrical properties was studied. The co-doped ZnO: (Li, N) films have a ZnO wurtzite structure. Electrical property studies indicated that the ZnO: (Li, N) film annealed at 500 degrees C in Ar showed p-type conductivity with a lowest resistivity of 10.83 Omega cm. The transmittance of ZnO: (Li, N) film is above 80 % in visible range and the band gap of ZnO: (Li, N) film have a evident narrowing after p-type doping.

引用

页码：2669 / 2673

页数：5

共 26 条

[1] On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide -: art. no. 112112 [J].

Barnes, TM ;

Olson, K ;

Wolden, CA .

APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3

[2]

Hao Y., 2009, J MAT SCI ENG, V27, P896

[3] First-principle study on the effect of high Li-2N co-doping on the conductivity of ZnO [J].

Hou, Qingyu ;

Li, Jijun ;

Zhao, C. W. ;

Ying, Chun ;

Zhang, Yue .

PHYSICA B-CONDENSED MATTER, 2011, 406 (10) :1956-1960

[4] Doping effects in ZnO layers using Li3N as a doping source [J].

Ko, HJ ;

Chen, YF ;

Hong, SK ;

Yao, T .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :628-632

[5] Design of shallow acceptors in ZnO: First-principles band-structure calculations [J].

Li, Jingbo ;

Wei, Su-Huai ;

Li, Shu-Shen ;

Xia, Jian-Bai .

PHYSICAL REVIEW B, 2006, 74 (08)

[6] Low-resistivity, stable p-type ZnO thin films realized using a Li-N dual-acceptor doping method [J].

Lu, J. G. ;

Zhang, Y. Z. ;

Ye, Z. Z. ;

Zhu, L. P. ;

Wang, L. ;

Zhao, B. H. ;

Liang, Q. L. .

APPLIED PHYSICS LETTERS, 2006, 88 (22)

[7] The fabrication and characterization of ZnOUV detector [J].

Moon, TH ;

Jeong, MC ;

Lee, W ;

Myoung, JM .

APPLIED SURFACE SCIENCE, 2005, 240 (1-4) :280-285

[8] ZnO Devices and Applications: A Review of Current Status and Future Prospects [J].

Ozgur, Umit ;

Hofstetter, Daniel ;

Morkoc, Hadis .

PROCEEDINGS OF THE IEEE, 2010, 98 (07) :1255-1268

[9] Influence of Al, In, Cu, Fe and Sn dopants on the response of thin film ZnO gas sensor to ethanol vapour [J].

Paraguay, DF ;

Miki-Yoshida, M ;

Morales, J ;

Solis, J ;

Estrada, LW .

THIN SOLID FILMS, 2000, 373 (1-2) :137-140

[10] Realization of stable p-type ZnO thin films using Li-N dual acceptors [J].

Rao, T. Prasada ;

Kumar, M. C. Santhosh .

JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (35) :8676-8682

← 1 2 3 →