Influence of post-annealing time on properties of ZnO: (Li, N) thin films prepared by ion beam enhanced deposition method

被引：4
|
作者：
Xie, Jiansheng [1 ]
Lu, Qi-fei [1 ]
Chen, Qiang [1 ]
机构：
[1] Changzhou Univ, Funct Mat Lab, Changzhou 213016, Jiangsu, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 05期
关键词：
OPTICAL-PROPERTIES; ZINC-OXIDE; TEMPERATURE; FABRICATION; LITHIUM;
D O I：
10.1007/s10854-014-2466-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lithium and nitrogen dual-doped ZnO films [ZnO: (Li, N)] with Li concentrations of 4 at.% were grown on glass substrates by ion beam enhanced deposition (IBED) and then annealing in Ar flow. The influence of post-annealing time on their structural, optical and electrical properties was studied. The co-doped ZnO: (Li, N) films have a ZnO wurtzite structure. Electrical property studies indicated that the ZnO: (Li, N) film annealed at 500 degrees C in Ar showed p-type conductivity with a lowest resistivity of 10.83 Omega cm. The transmittance of ZnO: (Li, N) film is above 80 % in visible range and the band gap of ZnO: (Li, N) film have a evident narrowing after p-type doping.
引用
收藏
页码：2669 / 2673
页数：5
相关论文
共 50 条
  • [1] Influence of post-annealing time on properties of ZnO: (Li, N) thin films prepared by ion beam enhanced deposition method
    Jiansheng Xie
    Qi-fei Lu
    Qiang Chen
    Journal of Materials Science: Materials in Electronics, 2015, 26 : 2669 - 2673
  • [2] Post-annealing influence on properties of N-In codoped ZnO thin films prepared by ion beam enhanced deposition method
    Yuan, Ningyi
    Fan, Lining
    Li, Jinhua
    Wang, Xiuqin
    APPLIED SURFACE SCIENCE, 2007, 253 (11) : 4990 - 4993
  • [3] Influence of post-annealing temperature on properties of ZnO:Li thin films
    Chen, LL
    He, HP
    Ye, ZZ
    Zeng, YJ
    Lu, JG
    Zhao, BH
    Zhu, LP
    CHEMICAL PHYSICS LETTERS, 2006, 420 (4-6) : 358 - 361
  • [4] Li–N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method
    谢建生
    陈强
    ChinesePhysicsB, 2014, 23 (09) : 465 - 469
  • [5] ZnO thin films prepared by ion beam enhanced deposition method
    Yuan, NY
    Li, JH
    Fan, LN
    Wang, XQ
    Zhou, Y
    2ND INTERNATIONAL CONFERENCE ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES, 2006, 6149
  • [6] Li-N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method
    Xie Jian-Sheng
    Chen Qiang
    CHINESE PHYSICS B, 2014, 23 (09)
  • [7] ZnO nanocrystalline thin films prepared by ion beam enhanced deposition method
    Yuan, N. Y.
    Li, J. H.
    He, Z. J.
    Li, G.
    Wang, X. Q.
    ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES, PTS 1 AND 2, 2007, 6722
  • [8] Influence of post-annealing condition on the properties of ZnO films
    Ng, Zi-Neng
    Chan, Kah-Yoong
    Sin, Yew-Keong
    Hoon, Jian-Wei
    Ng, Sha-Shiong
    CERAMICS INTERNATIONAL, 2013, 39 : S263 - S267
  • [9] Electrochromic WO3 thin films prepared by combining ion-beam sputtering deposition with post-annealing
    Xue, Jinxin
    Zhu, Yiqi
    Jiang, Meiping
    Su, Jiangbin
    Liu, Yang
    MATERIALS LETTERS, 2015, 149 : 127 - 129
  • [10] Post-annealing influence on electrical properties and photoluminescence of B-N codoping ZnO thin films
    Sui, Y. R.
    Yao, B.
    Yang, J. H.
    Gao, L. L.
    Yang, T.
    Deng, R.
    Ding, M.
    Zhao, T. T.
    Huang, X. M.
    Pan, H. L.
    Shen, D. Z.
    JOURNAL OF LUMINESCENCE, 2010, 130 (06) : 1101 - 1105
12345