Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities

被引：8
作者：
Dmowski, L. H. [1 ]
Baj, M. [2 ]
Konczewicz, L. [3 ]
Suski, T. [1 ]
Maude, D. K. [4 ]
Grzanka, S. [1 ]
Wang, X. Q. [5 ]
Yoshikawa, A. [6 ]
机构：
[1] Inst High Pressure Phys Unipress, PL-01142 Warsaw, Poland
[2] Univ Warsaw, Inst Expt Phys, Fac Phys, PL-00681 Warsaw, Poland
[3] Univ Montpellier 2, Grp Etud Semicond CC074, F-34095 Montpellier 5, France
[4] CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, F-38042 Grenoble, France
[5] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[6] Chiba Univ, Grad Sch Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 09期
关键词：
Maximum entropy methods - III-V semiconductors;
D O I：
10.1063/1.4710529
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The coexistence of two types of carriers (free electrons and free holes) in InN:Mg and their competition is demonstrated by the temperature and magnetic-field-induced change of the sign of thermopower (alpha) as well as the maximum entropy mobility spectrum analysis. The results confirm the existence of alternative carrier channels in addition to the n-type surface inversion layer and p-type bulk. They also show that In-polarity can be propitious for occurrence of p-type conductivity. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4710529]
引用
收藏
页数：5
相关论文
共 21 条
  • [1] Buried p-type layers in mg-doped InN
    Anderson, P. A.
    Swartz, C. H.
    Carder, D.
    Reeves, R. J.
    Durbin, S. M.
    Chandril, S.
    Myers, T. H.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (18)
  • [2] [Anonymous], SEMICONDUCTORS
  • [3] Baj M., MULTICARRIER C UNPUB
  • [4] Hole transport and carrier lifetime in InN epilayers
    Chen, F
    Cartwright, AN
    Lu, H
    Schaff, WJ
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (21) : 1 - 3
  • [5] The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition
    Dietz, N.
    Alevli, M.
    Atalay, R.
    Durkaya, G.
    Collazo, R.
    Tweedie, J.
    Mita, S.
    Sitar, Z.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (04)
  • [6] Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior
    Dmowski, L. H.
    Baj, M.
    Suski, T.
    Przybytek, J.
    Czernecki, R.
    Wang, X.
    Yoshikawa, A.
    Lu, H.
    Schaff, W. J.
    Muto, D.
    Nanishi, Y.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
  • [7] Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy
    Fehlberg, Tamara B.
    Umana-Membreno, Gilberto A.
    Gallinat, Chad S.
    Koblmueller, Gregor
    Bernardis, Sarah
    Nener, Brett D.
    Parish, Giacinta
    Speck, James S.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2423 - +
  • [8] Infrared analysis of hole properties of Mg-doped p-type InN films
    Fujiwara, Masayuki
    Ishitani, Yoshihiro
    Wang, Xinqiang
    Che, Song-Bek
    Yoshikawa, Akihiko
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (23)
  • [9] Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition
    Jain, Abhishek
    Weng, Xiaojun
    Raghavan, Srinivasan
    VanMil, Brenda L.
    Myers, Thomas
    Redwing, Joan M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (05)
  • [10] Mobility spectrum computational analysis using a maximum entropy approach
    Kiatgamolchai, S
    Myronov, M
    Mironov, OA
    Kantser, VG
    Parker, EHC
    Whall, TE
    [J]. PHYSICAL REVIEW E, 2002, 66 (03):
123