Transparent conducting zirconium-doped zinc oxide films prepared by rf magnetron sputtering

被引：56

作者：

Lv, M ^{[1
]}

Xiu, XW ^{[1
]}

Pang, ZY ^{[1
]}

Dai, Y ^{[1
]}

Han, SH ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys & Microelect, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2005年 / 252卷 / 05期

基金：

中国国家自然科学基金;

关键词：

zirconium; zinc oxide; sputtering; transparent conducting films;

D O I：

10.1016/j.apsusc.2005.02.131

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by rf magnetron sputtering at room temperature. The lowest resistivity achieved was 2.93 x 10(-3) Omega cm for a thickness of 475 nm with a Hall mobility of 13 cm(2) V-1 s(-1) and a carrier concentration of 1.71 x 10(20) cm(-3). The films are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. All the films present a high transmittance of approximately 90% in the visible range. The optical band gap decreases from 3.42 to 3.27 eV as the thickness increases from 100 to 600 nm. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：2006 / 2011

页数：6

共 19 条

[1] MOLECULAR DESIGN OF HOLE TRANSPORT MATERIALS FOR OBTAINING HIGH DURABILITY IN ORGANIC ELECTROLUMINESCENT DIODES [J].