Organosilicon ion beam for SiC heteroepitaxy

被引：2

作者：

Kiuchi, M ^{[1
]}

Matsutani, T

Takeuchi, T

Matsumoto, T

Sugimoto, S

Goto, S

机构：

[1] Natl Inst Adv Ind Sci & Technol, Ikeda, Osaka 5638577, Japan

[2] Nara Womens Univ, Nara 6308305, Japan

[3] Osaka Univ, Suita, Osaka 5650871, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 2004年 / 177卷

关键词：

organosilicon ion beam; SiC heteroepitaxy; low-energy deposition technique;

D O I：

10.1016/j.surfcoat.2003.09.003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A low-energy deposition technique using a beam of organosilicon ions has been developed and successfully applied for heteroepitaxial growth of SiC on a Si substrate at temperatures of 900 1300 K. The process employs gaseous CH3SiH2CH3 in a Freeman-type-ion source to produce CH3Si+ fragment ions that are then mass-selected and deposited at 100 eV on a Si wafer. Ion energy was precisely controlled and energy fluctuation was +/-1 eV. RHEED analysis and AFM observation, respectively, showed that a thin film of SiC had been crystallized heteroepitaxially and in the form of 'nano-tiles.' The technique offers the potential for fabrication of self-assembled SiC nanostructures. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：260 / 263

页数：4