Effect of Potassium Ferricyanide in the Acid Solution on Performance of Tungsten Chemical Mechanical Planarization

被引：8

作者：

Lim, Jae-Hyung ^{[1
]}

Park, Jin-Hyung ^{[1
]}

Park, Jea-Gun ^{[1
]}

机构：

[1] Hanyang Univ, Dept Nanoscale Semicond Engn, Adv Semicond Mat & Devices Dev Ctr, Seoul 133791, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2012年 / 159卷 / 04期

关键词：

W-CMP; OXIDIZERS; REMOVAL;

D O I：

10.1149/2.010204jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We investigated the effect of the oxidizer K3Fe(CN)(6) on the performance of chemical mechanical planarization (CMP) of tungsten film using the acid slurry. The addition of K3Fe(CN)(6) in the acid slurry formed the K2WO4 layer on the tungsten film surface, thereby increasing the polishing rate and decreasing the surface roughness of the tungsten film after CMP, which demonstrated better CMP performance than the oxidizer Fe(NO3)(3). Furthermore, the addition of H2O2 in the acid solution including K3Fe(CN)(6) enhances the chemical dissolution rate of the K2WO4 layer on the tungsten film surface, considerably increasing the polishing rate and decreasing surface roughness of the tungsten film. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.010204jes] All rights reserved.

引用

页码：H363 / H366

页数：4

共 14 条

[1] Effects of K3[Fe(CN)6] slurry's pH value and applied potential on tungsten removal rate for chemical-mechanical planarization application [J].