The quantum Hall effect in graphene - a theoretical perspective

被引:17
|
作者
Goerbig, Mark O. [1 ]
机构
[1] Univ Paris 11, CNRS, UMR 8502, Lab Phys Solides, F-91405 Orsay, France
关键词
Graphene; Strong magnetic fields; Quantum Hall effects; METROLOGY;
D O I
10.1016/j.crhy.2011.04.012
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
This short theoretical review deals with some essential ingredients for the understanding of the quantum Hall effect in graphene in comparison with the effect in conventional two-dimensional electron systems with a parabolic band dispersion. The main difference between the two systems stems from the "ultra-relativistic" character of the low-energy carriers in graphene, which are described in terms of a Dirac equation, as compared to the non-relativistic Schrodinger equation used for electrons with a parabolic band dispersion. In spite of this fundamental difference, the Hall resistance quantisation is universal in the sense that it is given in terms of the universal constant h/e(2) and an integer number, regardless of whether the charge carriers are characterised by Galilean or Lorentz invariance, for non-relativistic or relativistic carriers, respectively. (C) 2011 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:369 / 378
页数:10
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